关键词: 化学气相沉积, SiC, 微观结构, 稳定性

Abstract:

Microstructure, morphology, and thermal stability of silicon carbide were investigated which was chemical vapor deposited at normal atmosphere pressure in a CH 3SiCl 3 H 2 Ar system. At deposition temperature of 1300℃, the morphologies of SiC were whisker, film, and powder respectively as flow of H 2 was increased from 20, 200 to 700 ml·min 1 . The crystalline size and texture density of SiC film were increased with the increase of deposition temperatures when the flow of H 2 was maintained at 200 ml·min 1 . Within the present experimental conditions, the deposits were β SiC whose crystalline sizes were in 10 1nm scale. The crystal growth was observed after the deposit was annealed at temperature of 1550℃ in vacuum.

Key words: chemical vapor deposition, SiC　microstr ucture, stability