CVD-SiC阵列结构对ZrB2/SiC涂层抗烧蚀性影响

doi:10.7527/S1000-6893.2023.28842

Abstract

Abstract:

Influence of array structure on the performance of ZrB₂/SiC coatings was studied by using femtosecond laser to prepare arrays with different sizes on the surface of the Chemical Vapor Deposition （CVD）-SiC interlayer. Results showed that with the increase of laser etching frequency， the depth of the array structure increased from 30 μm to 150 μm. After 600 s of oxyacetylene combustion， the surface temperature of the ZrB₂/SiC coating decreased gradually with the increase of CVD-SiC microstructure depth， and the lowest surface temperature reached 1 700 ℃， which decreased by nearly 200 ℃. The color of the combustion center area transitioned from white to light gray. For the samples with an etching frequency of 5 times， after a single cycle of 600 s， the mass combustion rate and linear combustion rate were -7.4 × 10^-5 g/s and -13.3 μm/s respectively. The array structure increased the contact area between the ZrB₂/SiC coating and the CVD-SiC interlayer， thereby increasing the thermal conductivity， reducing heat accumulation， and ultimately enhancing the anti-combustion performance of the ZrB₂/SiC coating.

Key words: array structure, ablation, plasma spraying, C/C composite materials, CVD-SiC, laser etching

CLC Number:

V259

Zhiting GAO, Zhuang MA, Yanbo LIU. Effect of CVD-SiC array structure on ablation resistance of ZrB₂/SiC coatings[J]. Acta Aeronautica et Astronautica Sinica, 2024, 45(3): 428842-428842.

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序号	扫描速度/（mm·s^-1）	扫描间距/µm	刻蚀频次/h
1	300	150	1
2	300	150	5
3	300	150	10
4	300	150	15

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Effect of CVD-SiC array structure on ablation resistance of ZrB₂/SiC coatings

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Effect of CVD-SiC array structure on ablation resistance of ZrB2/SiC coatings

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Effect of CVD-SiC array structure on ablation resistance of ZrB₂/SiC coatings