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ACTA AERONAUTICAET ASTRONAUTICA SINICA ›› 2018, Vol. 39 ›› Issue (3): 321472-321472.doi: 10.7527/S1000-6893.2017.21472

• Electronics and Electrical Engineering and Control • Previous Articles     Next Articles

Electromagnetic scattering analysis of stealth radome with inductively coupled plasma in interlayer chamber

CHEN Junlin, XU Haojun, WEI Xiaolong, CHEN Zenghui, LYU Hanyang   

  1. School of Aeronautics and Astronautics, Air Force Engineering University, Xi'an 710038, China
  • Received:2017-06-01 Revised:2017-12-20 Online:2018-03-15 Published:2017-12-20
  • Supported by:
    National Natural Science Foundation of China (11402301)

Abstract: A stealth radome model with Inductively Coupled Plasma (ICP) in the interlayer chamber is designed. A two-dimensional fluid model of ICP discharge is built by integrating the finite element method and the ZT-FDTD method. The electron density distribution related to the electromagnetic scattering with different power and pressure is obtained. The FDTD method for Z transformation is established to calculate the backscatter of the plasma radome on the broadband. Microwave interference diagnosis and XFDTD software are used to validate the calculation. The results show that the ICP can produce high density plasma, and can effectively achieve the reduction of the Radar Cross Section (RCS). At 2 Pa air pressure, the electron density distribution is uniform, the collisional absorption of plasma is relatively weak, the bandwidth of the attenuation of RCS is concentrated near the plasma frequency, and the attenuation peak will move to high frequency zone with the increase of the power. At 20 Pa air pressure, the collisional absorption of the plasma is obviously improved to have larger gradient in density distribution of electrons, the bandwidth of the attenuation of RCS increases effectively, and the wave characteristics of the RCS profile is strengthened at the same time.

Key words: inductively coupled plasma, stealth radome, fluid model, FDTD method, radar cross section

CLC Number: