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ACTA AERONAUTICAET ASTRONAUTICA SINICA ›› 2022, Vol. 43 ›› Issue (4): 525341.doi: 10.7527/S1000-6893.2021.25341

• Articles • Previous Articles     Next Articles

Surface characteristics formation mechanism of ablated monocrystalline silicon by UV nanosecond pulsed laser

ZHANG Quanli, CHU Chenglong, ZHAI Jianchao, WANG Yukai, ZHANG Zhen, XU Jiuhua   

  1. College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • Received:2021-01-29 Revised:2021-03-05 Published:2021-04-29
  • Supported by:
    China Postdoctoral Science Foundation (2019TQ0151); Open Foundation of Graduate Innovation Center in Nanjing University of Aeronautics and Astronautics (KFJJ20200518)

Abstract: Laser surface microstructures of monocrystalline silicon can effectively improve the surface friction characteristics, optical reflectivity and hydrophobicity of the material, broadening the application range of monocrystalline silicon. To obtain a good surface texture, an experimental study on the surface array texture of monocrystalline silicon processed by Ultraviolet (UV) nanosecond laser was carried out based on analysis of the interaction mechanism between laser and material in this paper. The area method is applied to calculate the ablation threshold of monocrystalline silicon by the UV nanosecond laser. Subsequently, the influences of the parameters including the laser output power, pulse repetition frequency, spot scanning speed and number of scanning times on the groove width and depth were studied by the single factor method. The typical morphology characteristics and formation mechanism of the ablated groove were analyzed, and the influences of process parameters on microstructure characteristics were obtained. With the selected processing parameters, the microstructures including the lattice structure, square array, hexagon array, sine wave array and helix structure were fabricated on the surface of monocrystalline silicon.

Key words: nanosecond pulsed laser, monocrystalline silicon, material removal mechanism, surface characteristics, surface microstructures

CLC Number: