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ACTA AERONAUTICAET ASTRONAUTICA SINICA ›› 2009, Vol. 30 ›› Issue (11): 2229-2233.
• 材料工程与制造工艺 • Previous Articles Next Articles
Zhu Liqun, Chen Haining, Li Weiping
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Abstract: CuInS2 (CIS) thin films with sufficient sulfur content and good morphology are hard to be grown by the present electrodeposition technique. In order to deal with the problem, CuInS precursor thin films are prepared on ITO glass by the onestep electrodeposition technique in the electrolyte with SiO2 sol. The electrolytic bath used for the preparation of the thin films consists of metal salts, sodium thiosulfate (〖JP2〗Na2S2O3〖JP〗) and various concentrations of SiO2 sol. Then the CuInS precursor thin films are annealed in airatmosphere to ensure adequate crystallization of the CuInS2 thin films. Samples are characterized using Xray diffraction(XRD), scanning electron microscopy(SEM),energy dipersive spectroscopy(EDS) and open potential. It is found that films with higher crystallinity are achieved when the concentration of SiO2 sol is 4 mL/L. Besides, the morphology, composition, and photoresponse performance are improved by adding SiO2 sol in the electrolyte. The result of the investigation indicates that the performance of the CIS thin films can be improved by adding SiO2 sol in the electrolyte, especially when the concentration of the SiO2 is 4 mL/L.
Key words: thin films, CuInS2, SiO2 sol, electrodeposition, photoresponse performance
CLC Number:
TM912.2
TQ153.1
Zhu Liqun;Chen Haining;Li Weiping. Effect of SiO2 Sol on Performance of Electrodeposited CuInS2 Thin Films[J]. ACTA AERONAUTICAET ASTRONAUTICA SINICA, 2009, 30(11): 2229-2233.
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https://hkxb.buaa.edu.cn/EN/Y2009/V30/I11/2229