Abstract:

The VO₂ thin films prepared by an inorganic sol gel method possess a sharp resistivity switching up to 4～5 orders of magnitude. In this paper, the amorphous nanostructural layer in the V₂O₅ dry gel films was studied by XRD, DSC and TGA. In the process of crystallization from the amorphous state and in the subsequent vacuum heat treatment procedure from V₂O₅ to V₂, one can obtain low density nanostructural thin films with void structure, which was attributed to the high quality of resistivity jump at the phase transition.

Key words: VO₂, thin films;nanostructure;inorganic sol-gel method