Abstract: This paper presents the studies of electrical sheet resistance (R,Resistance per square area of the film and its temperature coefficient （TCR） and also the relation between R and TCR of the amorphous Ni-Si-B in the temperature range from 50 to 360℃ The relaxation activation energy （Ea） is calculated utilizing the slope ratio method Thq experimental results show that TCRs have the smallest value ± （10-6¹0-5）K-1, when Rs are between 80 to 550 ohm/square-area（Ω/□） Films in thisr range of Rs have better stability and highEa TCRs of the films with R<80 Ω/□ are all positive, TCRs of those withRs>550 Ω/□ are all negative the larger the Rs the greater the absolute value of its TCR, and the smaller the Ea.