材料工程与机械制造

单晶硅电火花线切割表面损伤层形成机理

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  • 南京航空航天大学 机电学院, 江苏 南京 210016
刘志东 男,博士,教授,博士生导师.主要研究方向: 特种加工、半导体材料加工. Tel: 025-84892520 E-mail: liutim@nuaa.edu.cn

收稿日期: 2011-04-26

  修回日期: 2011-05-29

  网络出版日期: 2012-01-16

基金资助

国家自然科学基金(50975142);江苏省科技支撑计划(BE2009161);江苏省博士后基金(1002009C)

Damage Mechanism of Monocrystalline Silicon Cut by WEDM

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  • College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

Received date: 2011-04-26

  Revised date: 2011-05-29

  Online published: 2012-01-16

摘要

为了研究单晶硅电火花线切割(WEDM)表面损伤层的损伤形式和形成机理,以电火花线切割加工后的单晶硅表面为研究对象,采用表面形貌观察分析及择优腐蚀方法研究了单晶硅经过电火花线切割后的加工表面.研究结果表明单晶硅经电火花放电加工后表面损伤形式分为4种:热损伤、应力损伤、热与应力综合作用损伤及电解/电化学腐蚀损伤.热损伤使得硅表面形成多晶或非晶硅;应力损伤使硅表面产生裂纹;热与应力综合作用会产生小孔效应,且随着放电功率密度的增加,小孔会明显增多;电解/电化学作用会加快损伤区域及杂质元素富集区域的腐蚀.

本文引用格式

刘志东, 高连, 邱明波, 田宗军, 汪炜 . 单晶硅电火花线切割表面损伤层形成机理[J]. 航空学报, 2012 , 33(1) : 156 -162 . DOI: CNKI:11-1929/V.20110726.1650.005

Abstract

This paper studies the surface of monocrystalline silicon cut by wire-cut electrical discharge machining (WEDM). The formation mechanism and damage forms of the damaged layer of monocrystalline silicon cut by WEDM are studied by observation and analysis of the surface morphology and anisotropic etching. The results show that there are four kinds of damage forms of the damaged layer: thermal damage, thermal stress damage, combined effects of heat and stress damage, and electrolytic and electrochemical corrosion damage. Thermal damage will produce polysilicon or amorphous silicon on the surface of the silicon; thermal stress damage will make the silicon surface crack; combined effects of heat and stress damage will produce small holes on the suface of the silicon, and the greater the discharge power density is, the more holes there are on the silicon surface; electrolytic and electrochemical reaction will cause accelerated corrosion of the damaged area and the area where contaminants are gathered.

参考文献

[1] Liu Z D, Wang W, Tian Z J, et al. Research on high efficiency slicing of EDM and ECM on solar wafer slicing. Chinese Mechanical Engineering, 2008, 19 (14): 1673-1677. (in Chinese) 刘志东, 汪炜, 田宗军, 等. 太阳能硅片电火花电解高效切割研究. 中国机械工程, 2008, 19(14): 1673-1677.

[2] Liu Z D, Qiu M B, Wang W, et al. Efficient wire-cut electrical discharge machine of large-sized and special-shaped germanium window. Acta Aeronautica et Astronautica Sinica, 2010, 31(6): 1288-1293. (in Chinese) 刘志东, 邱明波, 汪炜, 等. 大尺寸及异型锗窗高效电火花线切割技术. 航空学报, 2010, 31(6): 1288-1293.

[3] Fan R X, Lu H M. Study on surface damage in line-cutting silicon. Materials Science & Engineering, 1999, 17(2): 55-57.(in Chinese) 樊瑞新, 卢焕明. 线切割单晶硅表面损伤的研究. 材料科学与工程, 1999, 17(2): 55-57.

[4] Li M H. The theoretical basis of electrical discharge machining. Beijing: National Defense Industry Press, 1989: 25-30. (in Chinese) 李明辉. 电火花加工理论基础. 北京: 国防工业出版社, 1989: 25-30.

[5] Bismayer U, Brinksmeier E, Guttler B, et al. Measurement of subsurface damage in silicon wafers. Precision Engineering, 1994, 16(2): 139-143.

[6] Zarudi I, Zhang L C. Subsurface damage in single-crystal silicon due to grinding and polishing. Journal of Materials Science Letters, 1996, 15: 586-58.

[7] Zarudi I, Zhang L C. Effect of ultraprecision grinding on the microstructure change in silicon monocrystals. Journal of Materials Processing Technology, 1998, 84: 149-158.

[8] Chen Z G. Injury problems in silicon preparation. Physics, 1985, 14(5): 285-290. (in Chinese) 陈志恭. 硅片制备中的损伤问题. 物理, 1985, 14 (5): 285-290.

[9] Cai T H. Defects etching pits observations and analyses on epitaxial silicon cleavage surface. Acta Physica Sinica, 1980, 29 (2): 265-268. (in Chinese) 蔡田海. 硅外延层解理面缺陷腐蚀坑的观察及初步分析. 物理学报, 1980, 29(2): 265-268.

[10] Liu J F. Line curium cut monocrystalline stress field and damaged layer. Ji'nan: Shandong University, 2006. (in Chinese) 刘加富. 线锯切割单晶硅的应力场及损伤层研究. 济南: 山东大学, 2006.

[11] Jin X Z, Zhang Y, Li L J. A theoretical and experimental investigation on keyhole effects in deep penetration laser welding. Applied Laser, 2002, 22(2): 193-198. (in Chinese) 金湘中, 张屹, 李力钧. 激光深熔焊接小孔效应的理论和试验研究. 应用激光, 2002, 22(2): 193-198.

[12] Sun X F. Plasma and its application. Beijing: Higher Education Press, 1982: 45-48. (in Chinese) 孙杏凡. 等离子体及其应用. 北京: 高等教育出版社, 1982: 45-48.

[13] Jin X Z, Yan C. Research on refleting absorption in keyhole in deep penetration laser welding. Journal of Tianjin Polytechnic University, 2003, 22(5): 5-8. (in Chinese) 金湘中, 鄢锉. 激光深熔焊接小孔孔壁上的反射吸收研究. 天津工业大学学报, 2003, 22(5): 5-8.

[14] Wu S, Zhao H Y, Wang Y, et al. A new heat source model in numerical simulation of high energy beam welding. Transactions of the China Welding Institution, 2004, 25(1): 91-94. (in Chinese) 吴甦, 赵海燕, 王煜, 等. 高能束焊接数值模拟中的新型热源模型. 焊接学报, 2004, 25(1): 91-94.

[15] Wang W, Liu Z D, Tian Z J, et al. Surface integrity of low resistance mono-crystalline silicon in electric discharge-electrolytic combined machining. Electromachining & Mould, 2007(6): 6-10. (in Chinese) 汪炜, 刘志东, 田宗军, 等. 低电阻率单晶硅电火花/电解复合切割加工表面完整性研究. 电加工与模具, 2007(6): 6-10.
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